3-55
A16. The forward bias must be reduced below the minimum conduction level.
A17. SCR.
A18. During both alternations.
A19. Forward bias.
A20. Very low.
A21. The cathode.
A22. Very high.
A23. Reverse bias.
A24.
1:1000.
A25. Photovoltaic cell.
A26. One.
A27. Variable resistor.
A28. A voltage gradient.
A29. From base 1 to the emitter.
A30. High input impedance.
A31. Voltage controls conduction.
A32. Gate.
A33. N-channel and P-channel.
A34. N-type material.
A35. Effective cross-sectional area of the channel.
A36. From source to drain.
A37. Source-to-drain resistance increases.
A38. They are 180 degrees out of phase.
A39. The MOSFET has a higher input impedance.
A40. Gate, source, drain, and substrate.
A41. P-type material.
A42. The gate terminal.
A43. The dual-gate MOSFET.
A44. To prevent damage from static electricity.
