1-55
A15. Combination of monolithic ICs and film components.
A16. 1,000 to 2,000.
A17. Circuit design, component placement, suitable substrate, and depositing proper materials on
substrate.
A18. Complex.
A19. Control patterns of materials on substrates.
A20. Glass or ceramic.
A21. Crystal is sliced into wafers. Then ground and polished to remove any surface defect.
A22. Diffusion; epitaxial growth.
A23. Diffusion penetrates substrate; epitaxial does not.
A24. Electrical separation of elements.
A25. Evaporation and cathode sputtering.
A26. Screening.
A27. Combination of monolithic and film elements.
A28. Circuit flexibility.
A29. Protect the IC from damage; make handling easier.
A30. TO, flat pack, DIP.
A31. Flip-chip, beam lead.
A32. Left.
A33. Counterclockwise.
A34. Reference mark.
A35. Clockwise.
A36. Identify the type of IC.
A37. Communication.
A38. Integrated circuits.
A39. Miniature.
A40. Level 0.
A41. Level I.
A42. Level II.
